Nathaniel Quitoriano

 

Journal articles

A.J. O’Reilly, C. Francis, N.J. Quitoriano, Gold nanoparticle deposition on Si by destabilising gold colloid with HF, Journal of Colloid and Interface Science, v 370, p 46-50, 2011.
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Gold nanoparticle deposition on Si by destabilising gold colloid with HF [PDF - 955.27 KB]
 
A. Horth, N.J. Quitoriano, Novel, low-index waveguide as laser external cavity, Optics Express, v 20, p 11137-11142, 2012.
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Novel, low-index waveguide as laser external cavity [PDF - 1.56 MB]
 
N. J. Quitoriano and T. I. Kamins, Lateral, Ge, nanowire growth on SiO2, Nanotechnology, v 22, n 6, p 065201, 2011.
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Lateral-Ge [PDF - 1.05 MB]
 
N. J. Quitoriano, Lateral, high-quality, metal-catalyzed semiconductor growth on amorphous and lattice-mismatched substrates for photovoltaics, Applied Physics Letters, v 97, n 13, p 132110, 2010.
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QuitorianoAPL2010 [PDF - 748.11 KB]
 
N. J. Quitoriano, M. Belov, Stephane Evoy, and T. I. Kamins, Single-crystal, Si Nanotubes and Their Mechanical Resonant Properties, Nano Letters, v 9, n 4, p 1511, 2009.
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Quitoriano NT nano letter [PDF - 575.58 KB]
 
N. J. Quitoriano and T. I. Kamins, Guiding vapor-liquid-solid nanowire growth using SiO2, Nanotechnology, v 20, n 14, p 145303, 2009.
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Quitoriano Nanotechnology cover [PDF - 3.3 MB]
 
Quitoriano, N.J. and Kamins, T.I., Integratable nanowire transistors, Nano Letters, v 8, n 12, p 4410, 2008.
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Quitoriano guided NW growth Nano Letter [PDF - 1.87 MB]
 
Belov M., Quitoriano N.J., Sharma S., Hiebert W.K., Kamins T.I. Evoy S., Mechanical Resonance of clamped silicon nanowires measured by optical interferometry, Journal of Applied Physics, v 103, n 7, 2008, p 074304.
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Resonant Nanowires [PDF - 553.46 KB]
 
Quitoriano, N.J. and Kamins, T.I., Using pn junction depletion regions to position epitaxial nanowires, Journal of Applied Physics, v 102, n 4, p 044311, 2007.
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pn junction [PDF - 875.71 KB]
 
Quitoriano, N.J. and Fitzgerald, E.A., Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation, Journal of Applied Physics, v 102, n 3, p 033511, 2007.
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high-quality InP on GaAs [PDF - 2.37 MB]
 
Quitoriano, N.J. and Fitzgerald, E.A., Alternative slip system activation in lattice-mismatched InP/InGaAs interfaces, Journal of Applied Physics, v 101, n 7, p 073509, 2007.
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Alternative slip system [PDF - 1 MB]
 
Yun C.H., Quitoriano N.J., Cheung N.W. Polycrystalline silicon layer transfer by ion-cut, Applied Physics Letters, v 82, n 10, March 10, 2003, p 1544-6.
 
Quitoriano, N.J., Wong, W.S., Tsakalakos, L., Cho, Y., and Sands, T., Kinetics of the Pd/In thin-film bilayer reaction: implications for transient-liquid-phase wafer bonding, Journal of Electronic Materials, v 30, n 11, p. 1471-5, November 2001.
 
Wong, W.S., Wengrow A.B., Cho Y., Salleo A., Quitoriano N.J., Cheung N.W., Sands, T., Integration of GaN thin films with dissimilar substrate materials by Pd-In metal bonding and laser lift-off, Journal of Electronic Materials, v 28, n 12, December 1999, p 1409-13.
 

Patents

Theodore I. Kamins, R. Stanley Williams, and Nathaniel Quitoriano, Structure Including A Graphene Layer And Method For Forming The Same, U.S. Patent No. 8,043,687, issued October 25, 2011.
 
Quitoriano, N.J., Fiorentino, M., Kamins, T.I., Fattal, D.A., Cho, H.S., Nanowire photonic apparatus employing optical field confinement, U.S. Patent No. 7,474,811, issued January 6, 2009.
 
Wei Wu, David Fattal, Charles Santori, Robert N. Bicknell, Shih-Yuan Wang, R. Stanley Williams, Nathaniel J. Quitoriano, Optical device including waveguide grating structure, U.S. Patent No. 7,548,671, issued June 16, 2009.
 
David A. Fattal, Nathaniel Quitoriano, Hans S. Cho, Marco Fiorentino, Theodore I. Kamins, Plasmon-enhanced electromagnetic-radiation-emitting devices and methods for fabricating the same, U.S. Patent No. 7,781,853, issued August 24, 2010.
 

Presentations

Quitoriano, N.J., Engineering nanowire location and growth direction for both MOSFET-based and differential-mass, resonant sensors, presented at Standford University (EECS), Palo Alto, CA, February 2009.
 
Quitoriano, N.J. and Kamins, T.I., Guiding VLS Grown Nanowires in and directions on a (001) substrate using SIO2. Material Research Society (MRS), San Francisco, CA, April 2009.
 
Quitoriano, N.J., Belov, M., Evoy, S. and Kamins, T.I, Single-crystal Si nanotubes for differential mass sensors. Material Research Society (MRS), San Francisco, CA, April 2009.
 
Quitoriano, N.J. and Kamins, T.I., Controlling Growth direction and Location of Nanowires to Enable use of Conventional Lithography for MOSFET Fabrication. Material Research Society (MRS), Boston, MA, December 2008.
 
Quitoriano, N.J. and Kamins, T.I., Using pn Junction Depletion Regions to Position Epitaxial Nanowires. Material Research Society (MRS), Boston, MA, November 2007.
 
Quitoriano, N.J. and Fitzgerald, E., High-Quality InP on GaAs Using Graded Buffers Grown by MOVPE (Metal Organic Vapor Phase Epitaxy) Electronic Materials Conference (EMC), State College, PA, June 2006
 
Quitoriano, N.J. and Fitzgerald, E.A., Defect Behavior in Metamorphic Buffer Layers on Lattice Constants near InP Grown by Metal Organic Chemcial Vapor Deposition (MOCVD) on GaAs, Electronic Materials Conference (EMC), Santa Barbara, CA, June 2005.
 
Quitoriano, N.J. and Fitzgerald, E.A., Effects of Temperature and Strain on Dislocation Glide on (110) Planes in Zinc-Blend Materials (InP and InGaAs) Grown on a (001) Surface, Material Research Society (MRS), Boston, MA, November 2005.